低阈值InGaAsP/InP PBH双稳激光器  

InGaAsP/InP PBH Bistable Lasers with Low Threshold Current

作　　者：张权生[1] 吴荣汉[1] 林世鸣[1] 高洪海[1] 高文智[1] 吕卉[1] 韩勤[1] 段海龙 杜云[1] 芦秀玲[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1992年第2期103-108,T001,共7页半导体学报（英文版）

摘　　要：一种平面掩埋异质结构(PBH)InGaAsP/InP双区共腔双稳激光器业已研制成功.器件具有良好可控的光学双稳特性.激射波长1.3μm.直流L/I特性显示典型的迴滞曲线.导通阈电流的最低值为26mA,优于文献报道的最好值.在通态电流跨度内,器件以单纵模激射.数字光放大增益G≥30dB.导通时间τ_(on)<100ps,关断时间τ_(on)<1ns.InGaAsP/InP PBH bistable lasers emitting at 1.3μm have been developed by two step LPEmethod. The devices behave well-controled optical bistability.The typical hysteresis exhibitingin L/I curve has been obtained. The lowest Value of the turn-on threshold current is 26 mAat room temperature which is better than the best value in the literature.The single longitudinalmode operation in the current span of the turn-on state has been realized.The optical digitalamplification facter G≥30dB.The turn-on time τ_(on) is less than 100ps and the turn-off time τ_(off)is less than lns.

关 键 词：双稳 激光器 INGAASP/INP 

分 类 号：TN248[电子电信—物理电子学]