石榴石磁泡膜中3类硬磁畴的形成方法  

Formation of three kinds of hard magnetic domains in the garnet bubble films

作　　者：郭革新[1] 徐建萍[2] 何文辰[1] 

机构地区：[1]河北工业大学理学院,天津300130 [2]河北师范大学物理学院,河北石家庄050016

出　　处：《物理实验》2004年第5期13-16,共4页Physics Experimentation

基　　金：河北省自然基金项目 (No :1 0 0 1 4 7)

摘　　要：研究石榴石磁泡膜中硬磁畴畴壁中垂直布洛赫线的稳定性可为研制布洛赫线存储器提供有益的帮助 .3类硬磁畴的形成是研究硬磁畴稳定性的前提 .本文综述了在石榴石磁泡膜上形成硬磁畴的 2类方法———“脉冲偏场法”和“低直流偏场法” .结合文献中的典型样品 ,对用“脉冲偏场法”和“低直流偏场法”形成 3类硬磁畴的过程进行了简单介绍 .To research the stability of the vertical Bloch lines (VBL) which in the hard magnetic domains (HD) of garnet magnetic bubble film are able to provide the useful help for research and manufacture the Bloch lines storage (BLM). The formation of three kinds of HDs is the premise for the study of the stability of HDs. In this article, the two sorts of ways to form HDs at present, i. e. pulse bias field and low bias field, are summarized. The processes of formation of HDs using pulse bias field and low bias field are simply described for the typical sample of the reference.

关 键 词：硬磁畴 石榴石磁泡膜 枝状畴 脉冲偏场 直流偏场 

分 类 号：TM271.1[一般工业技术—材料科学与工程]