一种新型硅三端负阻器件  

A New Silicon Three Terminals Device with Negative Resistance

作　　者：郭维廉[1] 于彩虹[1] 

机构地区：[1]天津大学电子工程系,300072

出　　处：《固体电子学研究与进展》1992年第3期204-210,共7页Research & Progress of SSE

基　　金：国家自然科学基金项目

摘　　要：提出并研制成一种新型硅三端负阻器件。该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有“双负阻”特性和正阻区阻值易于控制等特点。由理论计算出的器件I_c—V_(CB)特性和负阻参数与实验结果符合良好。In this paper, a new silicon three terminals device with negative resistance has been proposed and fabricated. This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of 'dual negative resistance' characteristics and easily controlled resistance in positive resistance region. The theoretical calculating Ic-VCE characteristic and negative resistance parameters are in good agreement with the experimental results.

关 键 词：三端 负阻器件 复合或 集成器件 

分 类 号：TN43[电子电信—微电子学与固体电子学]