用喇曼光谱测定Ⅲ-Ⅴ族半导体带隙和载流子浓度  

Determination of Energy Gaps and Carrier Concentration of Ⅲ-Ⅴ Semiconductors by Raman Spectroscopy

作　　者：杨锦赐 连世阳[1] 张声豪[1] 颜永美 

机构地区：[1]厦门大学

出　　处：《固体电子学研究与进展》1992年第3期251-254,共4页Research & Progress of SSE

摘　　要：用共振喇曼散射研究半导体的能带结构,实验观察了Ga_(1-x)Al_xAs直接带隙单声子和GaP在间接带隙(г_(3v)—X_(3c))附近的双声子共振特性。阐述了由喇曼光谱测量确定Ⅲ—V族半导体的载流子浓度。The energy band structure of semiconductors is studied by resonant Raman scattering. Resonant behaviour of one -phonon mode at the Ga1-xAlxAs direct gap and two -phonon mode at the GaP indirect gap (X3c) are investigated. A method by measuring their Raman spectroscopy has developed for determining the carrier concentration of II-V semiconductors.

关 键 词：喇曼光谱 半导体 带隙 载流子 浓度 

分 类 号：TN304.23[电子电信—物理电子学]