DUBAT负阻参数的推导和功率DUBAT的设计与研制  

The Derivation on Negative Resistance Parameters of DUBAT and the Design and Fabrication of Power DUBAT

作　　者：郭维廉[1] 于彩虹[1] 

机构地区：[1]天津大学电子工程系,300072

出　　处：《固体电子学研究与进展》1992年第4期306-313,共8页Research & Progress of SSE

基　　金：国家自然科学基金资助项目

摘　　要：本文第一部分用较简单而不同于文献[1]的方法推导出双基区晶体管(DUBAT)有关的负阻参数,与实验结果符合良好;第二部分对功率型DUBAT进行了设计并初步制成这种器件。This paper contains two parts. In the first part,the negative resistance parameters of DUBAT have been derived by a new simple method which is different from reference [1]. The theoretical results are in good agreement with experimental results. In the second part,a power DUBAT has been designed and fabricated.

关 键 词：三端负阻器件 负阻器件 单结晶体管 

分 类 号：TN322.8[电子电信—物理电子学]