微通道板增益衰减的理论分析  

Theoretical Analysis of Decay of MCP Gain

作　　者：陶兆民[1] 韦亚一[1] 

机构地区：[1]中国科学院电子学研究所

出　　处：《光电子技术》1992年第1期59-64,共6页Optoelectronic Technology

摘　　要：本文根据作者已有的实验数据和在前人工作的基础上,分析了导致微通道板经电子轰击后增益大幅度下降的原因.并据此对照国外同类产品剖析了目前国内微通道板生产中影响增益的几个因素,提出相应的改进意见.From the experimental results performed by authors and other workers, the causes of the decay of MCP gain after bombarding by electrons have been analysed. Several factors which effect the decay of MCP gain have been discussed, and the corresponding suggestions have been presented.

关 键 词：微通道板 增益衰减 电子储增器 

分 类 号：TN152[电子电信—物理电子学]