椭圆偏振光研究N_2^+注入Si的退火特性  

The Method of Elliptically Polarized Light Studies Annealing Behaviours of Imphantation N_2^+ lato Si

作　　者：马德录[1] 宋昭朋[1] 苏铁力[1] 尚德颖 马国敬 赵淑玉 

机构地区：[1]辽宁大学物理系

出　　处：《辽宁大学学报（自然科学版）》1989年第3期37-40,共4页Journal of Liaoning University：Natural Sciences Edition

摘　　要：本文用椭圆偏振仪测量了在不同剂量和不同能量下的N_2^+注入Si后的随偏参数ψ和Δ,给出了离子注入辐射损伤与注入剂量和注入能量的关系,同时,我们在N_2气氛中对离子注入片进行等时热退火,然后测量ψ和Δ,给出了N_2^+注入Si的退火特性,结果表明:N_2^+注入Si的退火特性曲线,对不同的注入剂量和注入能量分别为“υ”形和“W”形。The parameters ψ and Δof elliptically polarized light have been measured in implantatior N_2^+ into Si with different energy and dose by the instrument of elliptically polarized light, the functions of the radioaction damage witl implanlation energy and dose have been given. Meanwhile the implantation N_2^+ into Si has been thermal annealed by equal duration in amealing furnace with N_2 gas. ψ and Δhaue been measured, annealing behaviours of imphantation N_2^+ into Si have been given. the results shown:the annealing behaviouro curves at different implantation euergy and dose are “υ” and “w”in shapes.

关 键 词：离子注入 辐射损伤 退火 偏振光 

分 类 号：TN305.3[电子电信—物理电子学]