亚硫酸根离子在硅和二氧化硅的湿法腐蚀中的作用(英文)  

The Role of Sulfite in the Wetting Etching of Silicon and Silica

作　　者：欧阳贱华[1] 吴念祖[1] 赵新生[1] 

机构地区：[1]北京大学分子动态与稳态结构国家重点实验室

出　　处：《物理化学学报》2004年第6期612-615,共4页Acta Physico-Chimica Sinica

基　　金：国家重点研究发展规划(TG1999075305,TG2000077503);国家自然科学基金(29973003,20333010)资助项目~~

摘　　要：运用光刻技术和原子力显微技术(AFM)研究了亚硫酸根离子对硅和二氧化硅在40％(w)氟化铵水溶液中腐蚀速率的影响.结果表明硅和二氧化硅的腐蚀速率和亚硫酸根离子浓度有关.高分辨X射线光电子能谱(XPS)分析在有/没有亚硫酸根的溶液中腐蚀后的硅和二氧化硅表面氟元素的结果表明在这两种溶液中腐蚀得到的表面化学成分是有差别的.实验结果证明亚硫酸根离子在硅和二氧化硅的湿腐蚀中不只是表现为一种除氧剂,还干预了表面腐蚀反应过程.The effects of sulfite on the etching processes of silicon and silica in 40% ( w) NH4F aqueous solution have been studied by a method based on photolithography and atomic force microscopy (AFM). It is demonstrated that the silicon and silica etching rates depend on the sulfite concentrations. The spectra of the F 1 s core level in the high resolution X-ray photoelectron spectroscopy (XPS) for surfaces treated in solutions with/without sulfite suggest the chemistry of the surfaces is different in the two cases. The experimental results indicate that sulfite not only acts as an oxygen scavenger, but also influences the surface reactions in the wetting etching of Si and SiO2.

关 键 词：硅 二氧化硅 腐蚀速率 氟化铵 亚硫酸铵 光刻术 

分 类 号：O611[理学—无机化学]