Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator  

作　　者：WANGZhang-tao FANZhong-cao XIAJin-song CHENShao-wu YuJinzhong 

机构地区：[1]StateKeyLaboratoryonIntegratedoptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,CHN

出　　处：《Semiconductor Photonics and Technology》2004年第2期78-81,共4页半导体光子学与技术（英文版）

基　　金：NationalNaturalScienceFoundationofChina (6 9896 2 6 0and 6 9990 5 4 0 ) ;National"973"Project (G2 0 0 0 0 36 6 )

摘　　要：The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.

关 键 词：BPM S-shaped bend SILICON-ON-INSULATOR 

分 类 号：TN252[电子电信—物理电子学]