Ⅱ-Ⅵ族半导体薄膜的特性  

Properties of Ⅱ-Ⅵ Compound Semiconductor Films

作　　者：张佐兰[1] 

机构地区：[1]东南大学,副教授南京210008

出　　处：《半导体光电》1993年第4期305-310,336,共7页Semiconductor Optoelectronics

摘　　要：(东南大学,南京 210008) 重点介绍Ⅱ-Ⅵ族化合物半导体薄膜的特性,特别是CdS和CdSe。利用密封空间汽化传输技术制作的CdS薄膜具有低的电阻(300K时,σ为0.88～1.34Ω^(-1)·cm^(-1))、高的载流子迁移率。X射线衍射仪分析表明:在(002)面择优生长,薄膜特性与制膜工艺有明显的关系,淀积后的退火和就地腐蚀能增大晶粒尺寸,减少晶粒边界。同时介绍了CdSe太阳电池的特性。This paper reports properties of Ⅱ-Ⅵ compound semiconductor films , in particular CdS and CdSe. Thin CdS films with low resistive (in the range of 0. 088～1.34Ω^(-1)·cm^(-1), at 300K) and high mobility have been grown using sealed space vapour transport technigues. X ray diffraction analysis shows that the films are grown preferentially in the (002) plane. The strong influence of growth tech- niques on behaviour of the films are also studied. The effect of post deposition an- nealing and in site etching on the reduction in the grain boundary and the increase of grain size is observed. This paper also reports characteristics of CdSe semiconduc- tor films -liguid junctions of solar cells.

关 键 词：太阳电池 化合物半导体 薄膜 晶体 

分 类 号：TN304.2[电子电信—物理电子学]