GaAs原子层外延技术的现状及发展  

Recent State and Progress in ALE Technique of GaAs

作　　者：戴国瑞[1] 王庆亚[1] 张玉书[1] 

机构地区：[1]吉林大学电子科学系,长春130023

出　　处：《半导体情报》1993年第4期10-16,共7页Semiconductor Information

摘　　要：综述了原子层外延(ALE)技术的现状及其发展趋势。研究了晶体生长的程序设计和实验装置、生长的动力学模型及反应机制。对ALE薄膜的组成和结构进行了Raman和质谱分析。采用SPA原位诊断技术控制ALE的晶体生长,可有效地实现选择外延和图形化的晶体生长。大量实验表明:ALE技术可以实现原子级尺寸的超薄层晶体外延生长。用此技术已成功地研制出GaAs/GaAlAs量子阱器件。A brief review is given to the present status and prospect for atomic layer epitaxy(ALE) technique. The crystal growth procedure and the experimental setup, the kinetic model and the reaction mechanism of GaAs-ALE are reported. The structure and the composition of GaAs films were investigated by means of laser Raman spectroscopy and mass spectroscopy. The in-situ monitoring of the growth process is important in controlling the growth rate as well as in achieving a selective area growth and patterned crystal growth. The experimental results indicate that the crystal epitaxial growth of ultra thin films(atomic size orders) can be realized and GaAs GaAlAs quantum well structure devices have been successfully developed using ALE technique.

关 键 词：砷化镓 原子层外延 发展 

分 类 号：TN304.054[电子电信—物理电子学]