SnO_2/Fe_2O_3多层薄膜界面过渡层的性质及其形成机制研究  

Properties and Formation of Interface Transition Layer for SnO_2/Fe_2O_3 Films Perpared by Plasma CVD

作　　者：马晓翠[1] 闫大卫[1] 吴军 王宗昌[1] 邹慧珠 

机构地区：[1]吉林大学电子科学系,长春130023

出　　处：《Journal of Semiconductors》1993年第6期361-367,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用等离子体化学气相淀积法制备SnO_2/Fe_2O_3多层膜的界面处存在着一个厚度约为数百埃的O-Sn-Fe过渡层,而通常化学气相沉积法所制备的SnO_2/Fe_2O_3多层薄膜不存在与其相似的过渡层。不同SnO_2含量的烧结型SnO_2-Fe_2O_3复合材料的电导及气敏测量分析结果支持过渡层具有低电导、低灵敏特性的假设。AES,XPS及气敏特性的研究表明,退火过程不是形成过渡层的主要原因。过渡层的形成源与沉积过程中的等离子体的作用。A Thick interface transition layer exists near the interface between the SnO_2 and Fe_2O_3 layer for SnO_2/Fe_2O_3 films perpared by plasma CVD. The sensitivity and conductance change of the sintered SnO_2/Fe_2O_3 sensors with the amount of SnO_2 (mol%) is similar to the variation of K value and conductance with the deposition time of the SnO_2/Fe_2O_3 films. The results support that the transition layer is assumed with lower conductance and sensitivity to flammable gas. The XPS and AES measurement rest lts obtained from the SnO_2/Fe_2O_3 films show that the thermal annealing process does not influence obviously the formation and exitence of the transition layer. We cannot find a transition layer similar to that in plasma CVD samples to exist in CVD SnO_2/Fe_2O_3 samples, although the CVD deposition temperature was higher than that for plasma CVD. The main reason for formation of the transition layer can be attributed to the effects of the plasma in the plasma CVD deposition process at low pressure.

关 键 词：半导体材料 薄膜 界面过渡层 性质 

分 类 号：TN304.2[电子电信—物理电子学]