非晶硅太阳电池光照J—V曲线反常拐弯现象的研究  

On Anomalous Illuminated J-V Characteristics of a-Si:H Solar Cells

作　　者：熊华[1] 廖显伯[1] 郑怀德[1] 李海峰[1] 刁宏伟[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1993年第6期337-344,共8页半导体学报（英文版）

摘　　要：本文研究了非晶硅(a-Si:H)pin型太阳电池光照J-V特性的反常拐弯现象,发现这种拐弯可以区分为两种类型,它们分别与出现在p界面或n界面上的空穴势垒相联系。并且,以多步隧道复合模型为基础,进行了模拟计算,得到了与实验数据相符合的结果。This paper reports investigation on 'S-like' bendings of the J-V characteristics of a-Si: H solar cells with configuration of glass/SnO_2/p a-SiCx:Hin/Ag. It is found that the bendings of the J-V curves can be classified into two kinds, based on the fact that the bending occours in the vicinity of V__(oc)or in the region of V>V_(oc),and can be explained in terms of an extra hole barrier existing at the p-or n-interfaces,respectively, induced by contamination or interfacial mismatch.A simulating calculation has been carried out based on a model of multi steps tunneling recombination, and the results obtained are in good agreement with the experimental curves.

关 键 词：非晶硅 太阳能电池 拐变现象 光照 

分 类 号：TM914.41[电气工程—电力电子与电力传动]