优质Al_xGa_(1-x)As/GaAs(x≤0.6)SAM—APD超晶格结构的MBE生长  

MBE Growth of High Quality Al_xGa_(1-x)As/GaAs(x≤0. 6) Superlattice Structure for SAM-APD Device

作　　者：林耀望[1] 

机构地区：[1]国家光电子工艺中心集成光电子学国家实验室中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1993年第11期715-717,共3页半导体学报（英文版）

摘　　要：本文描述了采用Varian GenⅡMBE系统,和VA-175型砷裂解炉,以及5个“9”的铍作p型掺杂剂,严格仔细地控制外延生长过程,成功地制备了优质的Al_xGa_(1-x)As/GaAs(x≤0.6)SAM-APD超晶格结构外延材料。倍增层p-Al_(0.6)Ga_(0.4)As的载流子浓度低达2.3×10^(14)cm^(-3)电子与空穴离化率的比值为25.0。此材料用于制作超晶格雪崩光电探测器,器件性能有显著的提高。在初始光电流I_(po)=100nA下,反向偏压为80伏得到的内部雪崩增益为1900,计算分析最大雪崩倍增因子高达6050。High quality and high Al composition Al_xGa_(1-x)As/GaAs(x≤0.6)SAM-APD Superlatricestructure materials were prepared with carefully controlled MBE growth process by usingVarian Gen Ⅱ MBE system, type VA-175 cracking source (As_2) and beryllium dopant (5 Npurity). The carrier concentration of p-Al_(0.6)Ga_(0.4)As multiplication layer reached as low as 2.3×10^(14)cm^(-3). The ionization rate ratio of electrons and holes (α/β) equal to 25. The performancecharacteristics of the SAM-APD devices with the structure materials were improvedgreatly. An internal multiplication gain of 1900 was obtained at-80V., when the initial photocurrentI_(Po) was 100nA. The maximum avalanche multiplication gain was 6050.

关 键 词：化合物半导体 超晶格 结构 MBE生长 

分 类 号：TN304.12[电子电信—物理电子学]