In_(0.53)Ga_(0.47)As MSM光电探测器光电响应速度研究  

Investigation on Photo-Electronic Response Time of In_(0.53)Ga_(0.47)As MSM Photodetector

作　　者：王庆康[1] 史常忻[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《Journal of Semiconductors》1993年第12期748-753,共6页半导体学报（英文版）

摘　　要：本文通过分析In_(0.53)Ga_(0.47)As材料的电子漂移速度与电场的非线性关系,研究了In_(0.53)Ga_(0.47)As金属-半导体-金属光电探测器(MSM-PD)的光电响应与指状电极间距离、光吸收层杂质浓度及工作电压之间的关系。研究结果表明、光电响应速度存在最佳值。用计算机辅助分析得到的In_(0.53)Ga_(0.47)As MSM-PD的光电响应时间与偏置电压的关系与实验器件实测结果相一致。研究结果为设计高速响应In_(0.53)Ga_(0.47)As MSM-PD及建立器件光电响应模型提供了依据。Using the method of computer-aided analysis, the transit time through a metal-semiconductor-metalstructure photodetectors (MSM-PD) as a function of applied voltage and otherparameters is calculated. It is shown that a minimum transit time exists in MSM-PD structurebecause of the stronger nonlinear relationship between the electron velocity and electricfieldin In_(0.53)Ga_(0.47)As.The calculated result fits well with the measurement datum of the responsetime of In_(0.53)Ga_(0.47)As MSM-PD against the applied voltage. The results can be used fordesign of high speed response MSM-PD and modelling the response time of metal-semiconductor-metalstructure photodetector.

关 键 词：金属-半导体 光电探测器 光电响应 

分 类 号：TN382[电子电信—物理电子学]