氟化非晶碳薄膜的低频介电性质分析  

Dielectric properties of fluorinated amorphous carbon thin films

作　　者：叶超[1] 宁兆元[1] 程珊华[1] 辛煜[1] 许圣华[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006

出　　处：《功能材料》2004年第3期338-340,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10175048);江苏省高校省级重点实验室开放课题资助项目(KJS01012)

摘　　要：　研究了电子回旋共振等离子体技术沉积的氟化非晶碳(a C∶F)薄膜的低频(102～106Hz)介电性质。发现a C∶F薄膜的低频介电色散随源气体CHF3/C6H6的比例、微波入射功率而改变。结合薄膜键结构的红外分析,发现薄膜中CC相对含量的增大是导致低频介电色散增强的原因,而C—F相对含量的增大则使低频介电色散减弱。The dielectric properties of amorphous fluorinated carbon (a-C:F) thin films in the frequency range of 102-106 Hz were investigated, which were prepared by electron cyclotron resonance plasma chemical vapor deposition using trifluromethane and benzene as the source gases. The dispersion at low frequency was found to be relevant to the relative content of C=C. The strong dispersion can be observed at high relative content of C=C due to the decrease in C-F content with weak polarization.

关 键 词：氟化非晶碳(α-C:F)薄膜 介电色散 键结构 

分 类 号：O484[理学—固体物理]