碳纳米管薄膜的制备及场发射特性研究  

Study on the synthesis and field emission property of nanotube film

作　　者：田时开[1] 曾葆青[1] 殷吉昊[1] 江天府[1] 杨中海[1] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054

出　　处：《功能材料》2004年第3期344-345,共2页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(G05010401);教育部博士点基金资助项目(20020614008);国防科学技术重点实验室基金资助项目(51440040101dz02)

摘　　要：　在镀铝硅片上电沉积Ni催化剂,采用催化热解法制备了多壁碳纳米管薄膜,反应气体为乙炔、氢气和氮气。实验表明在电沉积液中加入正硅酸乙酯作催化剂载体并进行退火后处理能有效减小碳纳米管管径,分析表明该纳米管直径在50～70nm间。测试了其场发射特性,其开启场强为8V/μm,最大发射电流密度为2mA/cm2,已基本满足场发射平面显示器对发射电流密度的要求。The nanotube film was grown on silicon substrate by catalytic decomposition of a gas mixture of nitrogen, hydrogen and acetylene using nickel particles as catalyst. Experimental results showed that by add TEOS into the liquid of electrodeposit and annealing after decomposition,carbon nanotubes with diameter of 50～70nm can be obtained. Field emission property nanotube film was investigated. The onset electric field for microampere level emission currentwas detected to be about 8V/μm. The highest field emission current density achieved was 2mA/cm^2. Based on the above results,we conclude that the carbon nanotube film was promising for the application in field emission displays.

关 键 词：碳纳米管 场发射 化学气相沉积 阴极 

分 类 号：O462.4[理学—电子物理学]