扫描隧道显微镜对氧化铁薄膜的观察  

Scanning Tunneling Microscope Study of Iron Oxide Thin Films

作　　者：周增均[1] 严隽珏[1] 

机构地区：[1]北京大学物理学系

出　　处：《北京大学学报（自然科学版）》1993年第3期342-346,共5页Acta Scientiarum Naturalium Universitatis Pekinensis

摘　　要：采用在溅射过程中加水蒸气的方法制备四氧化三铁Fe_3O_4薄膜。由扫描隧道显微镜(STM)对薄膜的表面形貌进行了观察。形貌随溅射时水蒸气的加入量不同而明显变化。小范围扫描首次清晰地显示出尖晶石(111)面,即结晶的择优取向。The Fe3O4 thin films were sputtered onto glass substrate by a water vapor added process. The topography of the thin film was imaged by the Scanning Tunneling Microscope (STM). The surface of the film changed dramaticaly with variation of the sputtering conditions. Using small area image we first determine the crystallographic orientation as well as the lattice plane.

关 键 词：显微镜 尖晶石 STM 薄膜 氧化铁 

分 类 号：TM277.1[一般工业技术—材料科学与工程]