可鉴别室内有害气体的铟锡氧化物薄膜气敏特性研究  

Fabrication and Testing of Indium-Tin-Oxide Thin-Film Gas-Sensor-Array for Indoors Hazerdous Gases Detection

作　　者：季振国[1] 孙兰侠[1] 何振杰[1] 范镓[1] 王玮[1] 方向生[2] 陈裕泉[2] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]浙江大学生物传感器国家专业实验室,杭州310027

出　　处：《传感技术学报》2004年第2期277-279,共3页Chinese Journal of Sensors and Actuators

基　　金：国家高技术研究发展计划 (86 3计划No .2 0 0 3AA - 3-A19/ 1);浙江省分析测试基金 (No.0 310 3)资助项目

摘　　要：采用无机试剂SnCl2 ·2H2 O及InCl3·4H2 O为原料 ,用溶胶 -凝胶提拉法制备了铟锡比不同的氧化铟锡薄膜构成的气敏传感器阵列 ,并对薄膜的电学性能及气敏性能进行了表征。结果表明 ,不同铟锡比组成的氧化铟锡薄膜不但载流子浓度不同 ,而且导电类型也不同 ,即阵列中每个传感器薄膜的载流子浓度和导电类型是不同的。当气体分子与阵列中的传感器表面接触时 ,由于载流子种类、载流子浓度、费米能级等的不同 ,导致电荷转移情况也不同 ,使得阵列具有很好的选择性。通过对甲醛、苯、甲苯、二甲苯的测试 ,证明此阵列对四种室内污染气体具有较好的选择性。Thin-film gas-sensor-array of indium-tin-oxide were fabricated by sol-gel dip-coating process using SnCl 2·2H 2O and InCl 3·4H 2O as source materials for tin and indium. The In/Sn ratio of individual sensor film was different from each other, leading to the formation of a gas-sensor-array in which the carrier concentration, the carrier type, and the Fermi level of each sensor film were different, determined by the Hall effect measurement. The conducting type of the sensor film is n-type when In/Sn low, or close to unity, while it is p-type when In/Sn is in the intermediate range. Gas detection measurements of the array show good selectivity for four common indoor hazardous gases (formaldehyde, benzene, dimethyl benzene, methyl benzene). It is suggested that charge transfer between the absorbing gases and the sensor films are different for each sensor because of different Fermi level of the sensor film caused by different carrier concentration and different conducting type, which increased the selectivity of the sensor array.

关 键 词：氧化铟锡薄膜 溶胶-凝胶法 气敏传感器阵列 选择性 

分 类 号：O472[理学—半导体物理] O659.36[理学—物理]