N_2O氧化制备MISiC氢传感器的响应特性分析  

Analysis on Hydrogen-Sensitive Characteristics of Schottky Sensor with N_2O-Grown Oxynitride as Gate Insulator

作　　者：韩弼[1] 徐静平[1] 黎沛涛[2] 李艳萍[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]香港大学电机电子工程系

出　　处：《传感技术学报》2004年第2期285-288,共4页Chinese Journal of Sensors and Actuators

基　　金：湖北省自然科学基金资助项目 (2 0 0 0J15 8)

摘　　要：采用N2 O氮化氧化技术制备氮化氧化物作为绝缘层制备金属 -绝缘体 -SiC(MISiC)肖特基势垒二极管(SBD)气体传感器的技术 ,对传感器的响应特性进行了研究。实验结果表明 ,N2 O工艺能明显改善栅绝缘层和衬底之间的界面特性从而提高传感器的性能 ,可在高温 (如 30 0℃ )等恶劣环境下长期可靠的工作 ,且适当增加绝缘层厚度有助于传感器灵敏度和可靠性的改进。A metal-insulator-n-type 6H-silicon carbide (MISiC) Schottky-barrier-diode (SBD) gas sensor with thin N 2O-grown oxynitride as gate insulator has been fabricated and studied. The results show that the N 2O-grown technique improves the interface properties between the gate insulator and the substrate and hence the sensor performance. Thus, it is suitable for long time working under harsh environments, e.g., an operating temperature of 300 oC. And increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.

关 键 词：氮化氧化物 金属-绝缘体-SiC(MISiC) 肖特基势垒二极管 气体传感器 

分 类 号：TN311.7[电子电信—物理电子学]