Sol-Gel法制备硅基钛酸铋铁电薄膜  

Study of Bi_4Ti_3O_(12) Ferroelectric Thin Films Prepared on p-Si Substrates by Sol-Gel Method

作　　者：郭冬云[1] 王耘波[1] 于军[1] 李建军[1] 周春兰[2] 王雨田[2] 魏龙[2] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]中国科学院高能物理研究所核分析室,北京100039

出　　处：《压电与声光》2004年第3期228-230,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60171012);中科院核分析技术开放实验室基金资助项目(K-96)

摘　　要：介绍溶胶-凝胶(Sol-Gel)法制备Bi4Ti3O12薄膜的工艺过程;对前驱体溶液进行了综合热分析,并对薄膜的性质进行了研究;成功地在p-Si衬底上制备出随机取向的Bi4Ti3O12铁电薄膜。在650°C下退火30min得到的Bi4Ti3O12薄膜的剩余极化强度Pr=12μC/cm2,矫顽场强Ec=130kV/cm。Randomly oriented ferroelectric Bi_4Ti_3O_(12) thin films have been prepared on p-Si substrates by the Sol-Gel method. A homogeneous and stable precursor solution is obtained using Bi(NO_3)_3·5H_2O and Ti(OC_4H_9)_4 as starting materials. The experimental results show that the thin films annealing at 650 °C for 30 min are well crystallized and dense, its remanent polarization is 12 μC/cm^2 and coercive field is 130 kV/cm.

关 键 词：SOL-GEL法 BI4TI3O12 铁电薄膜 

分 类 号：TM221[一般工业技术—材料科学与工程]