高纯区熔单晶硅高增益光晶体管的研究  

Ultra-high Sensitive Bipolar Detector on Float-Zone Silicon

作　　者：田晓娜[1] 张秀荣[1] 张海君[1] 韩德俊[1] G.Batignani 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]意大利国家原子核物理研究院比萨分院,意大利56100

出　　处：《光子学报》2004年第7期838-841,共4页Acta Photonica Sinica

基　　金：本项研究工作受到国家自然科学基金 (批准号 :6 0 2 4 4 0 0 4 );"86 3"计划 (课题编号 :2 0 0 2AA31312 0 )的部分资助

摘　　要：区熔单晶硅与直拉单晶硅以及其他半导体材料相比杂质含量少 ,少子寿命长 ,所以以区熔单晶硅为衬底制作的光晶体管在弱的光信号下仍然有高的增益 ,适宜于弱光探测 报道了以区熔单晶硅为衬底的光晶体管的实验结果 为了保持区熔高纯单晶硅内的少子寿命 ,背面淀积了一层掺磷多晶硅作为外吸杂层 已经测量得到对于实验中发射极直径为 2mm的光晶体管在波长为0 .83μm的入射光照射下 ,光功率低至 0 .16nW时 ,光晶体管的增益仍然高达 4 40Since the float-zone (FZ) silicon has lower contaminations and longer minority carrier lifetime than those in Czochralski Silicon and other semiconductor material, it has potential advantages to fabricate phototransistor on high-purity FZ silicon substrate to achieve a high gain at ultra low signal levels. Preliminary experimental results of a phototransistor fabricated on an unusual high-purity FZ silicon substrate have been obtained. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The bipolar detector with a circle of 2 mm diameter has demonstrated high gain up to 4400 for 0.16 nW light with wavelength of 0.83 μm.

关 键 词：区熔单晶硅 外部吸杂 光晶体管 增益 少子寿命 

分 类 号：TN366[电子电信—物理电子学]