A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers  

AlInAs氧化物限制1.3μm低阈值边发射激光器(英文)

作　　者：刘志宏[1] 王圩[1] 王书荣[1] 赵玲娟[1] 朱洪亮[1] 周帆[1] 王鲁峰[1] 丁颖[1] 

机构地区：[1]中国科学院半导体研究所光电子研发中心,北京100083

出　　处：《Journal of Semiconductors》2004年第6期620-625,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :90 10 10 2 3 )~~

摘　　要：A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.研究制作了一种利用AlInAs氧化物作为限制的 1.3μm边发射AlGaInAs多量子阱激光器 .有源层上方和下方的AlInAs波导层被氧化作为电流限制层 .这种结构提供了良好的侧向电流限制和光场限制 .当电流通道为 5 μm宽时 ,获得了 12 9mA的阈值电流和 0 4 7W /A的斜率效率 .与具有相同宽度的脊条的脊波导结构的激光器相比 ,这种AlInAs氧化物限制的激光器的阈值电流降低了 31 7% ,斜率效率稍微有所提高 .低阈值和高效率的特性表明 ,氧化AlInAs波导层能够提供良好的侧向电流限制 .这种AlInAs氧化物限制的激光器垂直方向的远场半高全宽角为36 1° ,而水平方向的是 2 1 6°,表明AlInAs氧化物对侧向光场也有很强的限制能力 .

关 键 词：AlInAs-oxide confinement RWG edge emitting LASER 

分 类 号：TN2484[电子电信—物理电子学]