Ga_xIn_(1-x)P/AlGaInP多量子阱的吸收/反射光谱:多光束干涉的影响与消减  

Absorption and Reflectivity of GaInP/AlGaInP Multiple Quantum Wells:Influence and Reduction of Multi-Beam Interference

作　　者：邵军[1] 

机构地区：[1]4 Physikalisches Institut

出　　处：《Journal of Semiconductors》2004年第6期651-656,共6页半导体学报（英文版）

基　　金：上海市自然科学基金 (批准号:0 2ZA14 114 );国家自然科学基金 (批准号 :60 2 760 0 6);国家重点基础研究专项经费(批准号 :G0 0 1CB3 0 95 )资助项目~~

摘　　要：通过测量GaAs基GaxIn1-xP/AlGaInP多量子阱的光学吸收谱 ,揭示出采用吸收谱研究该量子阱系统所遭遇的困难 ,并判明吸收谱中高频振荡干扰的来源为多光束干涉 ,从而指出消减振荡干扰的有效途径在于降低量子阱样品的有效厚度 .提出了适用于反射光谱测量的样品结构 ,并在实验中观察到激子跃迁 .通过对反射谱进行导数操作 ,达到了准确测定激子跃迁能量的目的 。By measuring optical absorption of GaInP/AlGaInP MQWs,the difficulty is explicitly illustrated in studying by the absorption spectroscopy.The high frequency oscillation observed in the absorption is identified to be multi-beam interference.A manner is taken to diminish the interference by reducing the effective thickness of the sample.Improved sample structures are proposed for reflectivity measurement,which leads exciton transitions to be unambiguously identified.With the aid of spectroscopic derivative,the excitonic transition energy can be definitely determined,which warrants a reliable reflectivity study of the optical properties of the MQW systems.

关 键 词：吸收谱 反射谱 多量子阱 多光束干涉 谱导数 

分 类 号：O43351[机械工程—光学工程]