FeS_2薄膜厚度对晶体生长及光吸收特性的作用  

Effect of Film Thickness on Crystal Growth and Optical Properties of FeS_2 Thin Films

作　　者：张秀娟[1] 孟亮 刘艳辉[1] 

机构地区：[1]浙江大学金属材料研究所,杭州310027

出　　处：《Journal of Semiconductors》2004年第6期657-661,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 0 0 710 5 6)~~

摘　　要：在单晶Si衬底上用磁控溅射Fe膜并硫化的方法 ,制备了不同厚度的FeS2 薄膜 ,测定了晶体结构及光学性能 .结果表明 ,薄膜晶体学位向分布随薄膜厚度的增大可发生一定程度的变化 .随着薄膜厚度增加到 330nm ,晶粒尺寸增加而晶格常数减小 ;但当薄膜厚度大于 330nm时 ,晶粒尺寸下降而晶格常数增大 .光吸收系数以及禁带宽度均随薄膜厚度的增加而下降 .相变应力。The FeS 2 films with different thickness are prepared by sulfur-annealing the Fe films deposited on single-crystal silicon substrates by magnetron sputtering.The behaviors of crystal growth and optical absorption are determined.The distributed proportion of the crystalline orientation shows certain alteration with increasing in film thickness.The grain size increases but the lattice constant decreases with increasing in film thickness up to 330nm.However,the grain size decreases but the lattice constant increases as film thickness is over 330nm.Both the optical absorption coefficient and bandgap decrease with increasing in film thickness.The changes of phase transformation stress,specific surface area,and crystal defect density with film thickness can be considered to be generally responsible for the behaviors of crystal growth and optical properties.

关 键 词：FeS2 薄膜 晶体结构 光学性能 

分 类 号：TN304[电子电信—物理电子学]