半绝缘GaAs光电导开关的击穿特性  

Breakdown Characteristics of Semi-Insulating GaAs Photoconductive Switch

作　　者：施卫[1] 田立强[1] 

机构地区：[1]西安理工大学应用物理系,西安710048

出　　处：《Journal of Semiconductors》2004年第6期691-696,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号 :5 0 0 770 17;10 3 760 2 5 /A0 6)~~

摘　　要：研究了在不同触发条件下半绝缘GaAs光电导开关的击穿特性 .当触发光能量和偏置电场不同时 ,半绝缘GaAs光电导开关的击穿损坏程度也不同 ,分别表现为完全击穿、不完全击穿和可恢复击穿三种类型 .通过对击穿实验结果的分析认为 ,电子俘获击穿机制是导致半绝缘GaAs光电导开关击穿损坏的主要原因 .偏置电场和陷阱电荷所产生热电子的数量和动能决定了Ga—As键的断裂程度 。A theoretical analysis for breakdown of photoconductive switch is proposed according to different breakdown character istics in the case of different optical trigger energies and bias voltage.A model of electron-trapping breakdown theories to analyze the breakdown characteristics of GaAs photoconductive switches is first proposed.The main points are that the bias electric field and the charges in the traps are the main reasons to generate hot electrons,and the number and the kinetic energy of hot electrons are determinative for damage degree of Ga-As bands,that relaxation degree of Ga-As network reflects the degree of breakdown.

关 键 词：砷化镓 光电导开关 击穿机理 

分 类 号：TN364[电子电信—物理电子学]