单电子晶体管的I-V特性数学模型及逻辑应用  

A Mathematical Model of I-V Characteristics of Single-Electron Transistors and Their Logic Applications

作　　者：孙铁署[1] 蔡理[1] 

机构地区：[1]空军工程大学工程学院,陕西西安710038

出　　处：《微电子学》2004年第3期269-272,共4页Microelectronics

基　　金：陕西省自然科学基金项目(2002F34);空军工程大学学术基金项目(2002X12)

摘　　要：　基于正统单电子理论,提出了单电子晶体管的I-V特性数学算法改进模型。该模型的优点是:考虑了背景电荷的影响,可由实际物理参数直接获得,支持双栅极工作,便于逻辑电路的分析。研究了背景电荷和各物理参数对I-V特性及跨导的影响,讨论了双栅极单电子晶体管的逻辑应用:简化了"异或"逻辑电路,改进了二叉判别图电路的逻辑单元。A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory. With the effects of background charges taken into consideration, the model can be calculated directly from physical parameters, and it works in double-gate SET and its applications to logic circuits are promising. Influences of background charges and physical parameters on the I-V characteristics and transconductances are analyzed. The logic applications of double-gate SET are discussed. Exclusive OR circuit is simplified and the unit device for Binary Decision Diagram (BDD) logic circuit is improved.

关 键 词：单电子晶体管 背景电荷 双栅 异或 二叉判别图 

分 类 号：TN321[电子电信—物理电子学]