基于弱外延生长的有机薄膜晶体管的研究  

The Research of OTFTs Based on Weak Epitaxy Growth

作　　者：洪飞 谭莉 朱棋锋 向长江 郭晓东 申剑锋 

机构地区：[1]上海中科高等研究院新型显示技术研究中心,上海

出　　处：《应用物理》2013年第2期50-55,共6页Applied Physics

基　　金：上海市科委科研基金:No.10dz1100300。

摘　　要：采用弱外延生长(Weak Epitaxy Growth, WEG)的方法制备OTFTs,研究了不同衬底温度对诱导层p-6P生长形貌的影响,以及WEG-OTFTs器件特性与诱导层形貌的关系。另外,还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm,衬底温度180度时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs。OTFTs were prepared by the method of WEG (Weak Epitaxy Growth). The results showed that substrate temperature strongly affected the growth morphology of p-6P inducement layer, and the relationship between WEG- OTFTs device characteristics and the morphology of p-6P inducement layer. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then decreased at last. The maximum field effect mobility we obtained was 1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180?C.

关 键 词：有机薄膜晶体管 弱外延生长 p-6P 酞菁化合物 

分 类 号：R73[医药卫生—肿瘤]