微通道板打拿极导电层ALD制备技术研究进展  

Research Progress of ALD Preparation Technology for Dynode Conductive Layer of Microchannel Plate

作　　者：姜柱松 王国政[1] 

机构地区：[1]长春理工大学理学院,吉林 长春

出　　处：《应用物理》2021年第1期25-35,共11页Applied Physics

摘　　要：微通道板是具有高长径比结构的二维通道电子倍增器,在微光夜视领域有广泛应用。传统铅硅酸盐玻璃微通道板受到制备工艺和基体材料选择的限制,不能满足小孔径、高分辨率、低噪声等要求。先进技术微通道板打拿极导电层电阻率不易控制且难以做到基体绝缘。原子层沉积技术具有自限性、厚度可精确控制和沉积温度低等优势,为打拿极的制备提供了新的思路。本文介绍了原子层沉积技术原理,导电层结构设计,介绍了ZnO/Al2O3、W/Al2O3、Mo/Al2O3以及Nb2O5/Ta2O5作为导电材料的研究进展。最后分析了原子层沉积微通道板导电层存在的问题以及发展方向。The microchannel plate is a two-dimensional channel electron multiplier with a high aspect ratio structure, which is widely used in the field of low-light night vision. The traditional lead silicate glass microchannel plate is limited by the preparation process and the choice of matrix materials, which cannot meet the requirements of small pore size, high resolution and low noise. The resistivity of the conductive layer of the advanced technology microchannel plate dynode is not easy to control and it is difficult to achieve substrate insulation. Atomic layer deposition technology has the advantages of self-limiting, precise thickness control and low deposition temperature, which provides new ideas for the preparation of dynodes. This article introduces the principle of atomic layer deposition technology, and the design of conductive layer structure, describes the research progress of ZnO/Al2O3, W/Al2O3, Mo/Al2O3 and Nb2O5/Ta2O5 as conductive materials. Finally, the problems and development directions of the conductive layer of the atomic layer deposition microchannel plate are analyzed.

关 键 词：微通道板 打拿极 原子层沉积 导电层 

分 类 号：TB3[一般工业技术—材料科学与工程]