半导体材料在气体环境中演变机制的原位透射电镜研究综述  

Review of in Situ TEM Study on Evolution Mechanism of Semiconductor Materials in Gas Environment

作　　者：韩明智 刘俊杰 曹立伟 徐杰[1] 韩晓东[1] 

机构地区：[1]北京工业大学物理与光电工程学院,北京

出　　处：《应用物理》2024年第5期309-320,共12页Applied Physics

摘　　要：半导体材料在一定温度下会和气体发生反应,导致其形貌、晶体结构和化学性质等发生变化。这一现象在半导体的生长、加工和应用中普遍存在,因此,研究半导体在气体环境中的变化过程具有重要意义。为了深入理解半导体在反应过程中的变化机制,需要观察样品的微观结构变化,通过将环境透射电子显微镜和原位加热样品杆相结合,可以对样品进行纳米级甚至原子级尺度的研究。本文对这一方面的研究成果进行了综述,有利于深入理解反应机制,扩大半导体材料的应用潜力。Semiconductor materials will react with gases at a certain temperature, resulting in changes in their morphology, crystal structure and chemical properties. This phenomenon is common in the growth, processing and application of semiconductors. Therefore, it is of great significance to study the change process of semiconductors in the gas environment. In order to deeply understand the change mechanism of semiconductors in the reaction process, it is necessary to observe the microstructure changes of samples. By combining environmental transmission electron microscope with in-situ heated sample rod, the samples can be studied at the nanoscale or even at the atomic scale. In this paper, the research results in this area are reviewed, which is helpful to understand the reaction mechanism and expand the application potential of semiconductor materials.

关 键 词：环境透射电子显微镜 半导体 温度 

分 类 号：G63[文化科学—教育学]