电子束蒸发Cu膜的厚度均匀性和准确性的研究  

Study on Thickness Uniformity and Accuracy of Electron Beam Evaporation Cu Thin Film

作　　者：郭俊寒 季鸿雨 于海洋 孟腾飞 张玉涛 常子硕 遆鹏 陈瑞 

机构地区：[1]北京航天微电科技有限公司,北京

出　　处：《仪器与设备》2024年第4期527-534,共8页Instrumentation and Equipments

摘　　要：采用BAK761电子束蒸发设备制备Cu膜,研究了Dist. shield的形貌对Cu膜片内均匀性的影响。实验表明,未增加Dist. shield时,Cu膜的厚度从靠近晶振侧向远离晶振侧逐渐增大。采用现有挡板蒸发Cu膜,行星架内圈基片表面Cu膜厚度的片内均匀性约为0.8%。通过调节挡板宽度,使得Cu膜片内均匀性达到0.4%左右。同时通过采用“公转加自转”的方法,可以有效分散镀膜误差,最终将膜厚均匀性优化至0.3%。同时,通过修正工具因子,可以将实际膜厚值与目标膜厚值的偏差从约±1.5%降为±1%以内。实时调整工具因子,以应对挖坑效应造成的厚Cu膜和薄Cu膜准确性偏差问题。Cu films were prepared by BAK761 electron beam evaporation equipment. The effect of the appearance of Dist. shield on the homogeneity of Cu films is studied. The experimental results show that the thickness of Cu film increases gradually from the side near the crystal oscillator to the side away from the crystal oscillator when the shield is not added. The thickness uniformity of Cu film on the surface of the inner ring substrate is about 0.8% by using the exiting shield to vaporize Cu film. By adjusting the width of the shield, the uniformity in the Cu diaphragm, reaches about 0.4%. At the same time, by using the method “revolution and rotation”, the coating error can be effectively dispersed, and the film thickness uniformity can be optimized to 0.3%. At the same time, the deviation between the actual film thickness and the target film thickness can be reduced from about ±1.5% to less than ±1% by modifying the tooling factor. At the same time, the tooling factor is corrected to deal with the accuracy deviation of thick Cu film and thin Cu film caused by the digging effect.

关 键 词：电子束蒸发 Cu薄膜 片内均匀性 准确性 

分 类 号：O48[理学—固体物理]