氧化锌薄膜晶体管应力稳定性及电性能优化  

Optimization of Stress Stability and Electrical Properties of Zinc Oxide Thin-Film Transistor

作　　者：肖朋 

机构地区：[1]合肥工业大学微电子学院,安徽 合肥

出　　处：《传感器技术与应用》2024年第6期828-838,共11页Journal of Sensor Technology and Application

摘　　要：随着信息技术进步,显示技术正朝高分辨率、大柔韧性和低能耗发展。ZnO TFT因高透明度、良好环境稳定性和潜在高迁移率,被视为下一代显示技术关键材料,但应力稳定性问题限制了其应用。本研究针对ZnO TFT的应力稳定性与电学性能优化展开,旨在通过材料设计、制备工艺及表征技术揭示关键影响因素,并提出改善策略。同时,探索In掺杂对ZnO TFT电学性能的调控机制,以获得高性能TFT器件。这不仅有助于理解ZnO TFT物理机制,也为推动其在柔性显示等领域的应用提供理论支撑和实验依据。本研究综述了ZnO TFT的研究背景,阐述了TFT结构、机制及性能指标,采用磁控溅射、光刻图案化等技术制备了ZnO和InZnO TFT器件,并利用多种表征手段全面分析了薄膜及器件性能。重点研究了氧含量、钝化层及In掺杂量对稳定性和电学性能的影响,揭示了相关机制,并成功制备了高性能TFT器件。最后,总结了研究成果,展望了ZnO TFT的未来发展方向,为相关领域研究提供参考。With the progress of information technology, display technology is developing towards high resolution, great flexibility and low energy consumption. ZnO TFT Due to high transparency, good environmental stability and potentially high mobility, but stress stability problems limit its application. This study aims to optimize the stress stability and electrical performance of ZnO TFT, and aims to reveal the key influencing factors through material design, preparation process and characterization technology, and propose improvement strategies. Meanwhile, the regulation mechanism of ZnO TFT electrical performance was explored to obtain high-performance TFT devices. This is not only helpful to understand the physical mechanism of ZnO TFT, but also provides theoretical support and experimental basis for promoting its application in flexible display and other fields. In this study, we summarized the research background of ZnO TFT,

关 键 词：氧化锌 薄膜晶体管 场效应迁移率 稳定性 

分 类 号：TN3[电子电信—物理电子学]