基于模式扩展层结构的980 nm小发散角半导体激光器模拟研究  

Study on Simulation of 980 nm Small Far Field Divergence Semiconductor Lasers Based on Mode Expansion Layers

作　　者：曾丽娜 李林 李再金 赵志斌 曲轶 彭鸿雁[1] 

机构地区：[1]海南师范大学,物理与电子工程学院,海南海口

出　　处：《现代物理》2018年第6期265-270,共6页Modern Physics

基　　金：海南省自然科学基金(2018CXTD336,618MS055,618QN241)资助。

摘　　要：为了获得小垂直发散角和较低阈值电流密度,本文设计了一种基于模式扩展层结构的980 nm In-GaAs/GaAs/AlGaAs单量子阱激光器新型结构。通过Crosslight软件模拟优化,研究了模式扩展层和低折射率层对激光器的垂直发散角及阈值电流密度的影响。当激光器垂直发散角为17?时,激光器阈值电流密度为257 A/cm2。垂直发散角最小可以达到15?左右,阈值电流密度为494 A/cm2。In order to obtain small far field divergence angle and lower threshold current density, a novel structure of 980 nm InGaAs/GaAs/AlGaAs single quantum well laser based on mode expansion layers has been designed. The effects of mode expansion layers and lower refractive index layers on far field divergence and threshold current density have been investigated using Crosslight software. The calculated results show that the optimized structure has a threshold current density of 257 A/cm2 when far field divergence is about 17?. The far field divergence angel can be as low as 15? when the threshold current density is 494 A/cm2.

关 键 词：半导体激光器 垂直发散角 阈值电流密度 限制因子 模式扩展层 

分 类 号：TN2[电子电信—物理电子学]