电场调控AlGaAs/GaAs Rosen-Morse量子阱非线性光学特性研究  

Nonlinear Optical Properties of AlGaAs/GaAs Rosen-Morse Quantum Well under Applied Electric Field

作　　者：张志海[1] 袁建辉[2] 

机构地区：[1]盐城师范学院,物理与电子工程学院,江苏 盐城 [2]广西医科大学,物理系,广西 南宁

出　　处：《现代物理》2022年第6期137-145,共9页Modern Physics

摘　　要：在本工作中,我们运用密度矩阵和迭代的方法系统研究了外加电场调控下AlGaAs/GaAs Rosen-Morse量子阱的非线性光学性质。同时我们采用有限差分方法求解该系统的能级以及对应的波函数。研究发现:非线性光吸收和光整流的共振峰的大小和位置与外加电场和系统的结构参数有着密切的关系;随着结构参数和外加电场的增大,非线性光吸收系数和光整流的峰值强度呈现出非线性的变化,这意味着通过调制外加电场和结构参数可实现对系统非线性光学性质的有效调控,从而给出系统最优化的设计方案。In this study, the intersubband optical absorption coefficients and optical rectification in Rosen-Morse quantum well are investigated for different applied electric field. The energy levels and the envelope wave functions of an electron confined in Rosen-Morse quantum well are calculated by finite difference method. The numerical results show that the magnitude and the position of the nonlinear optical absorption and the optical rectification depend on the shape of potential and the electric field strength. With the increase of structure parameter and applied electric field, the peak value of the nonlinear optical absorption coefficient and the optical rectification show non-linear change. We can effective control the nonlinear optical properties of the system with the structure parameter and applied electric field. Thus the design scheme of the optimization system is given.

关 键 词：ALGAAS/GAAS 非线性光学性质 非线性光学特性 共振峰 外加电场 光吸收系数 密度矩阵 量子阱 

分 类 号：TB34[一般工业技术—材料科学与工程]