界面对金属诱导硅[111]取向薄膜生长的影响  

The Interface Effect on the Growth of Al Induced [111] Oriented Silicon Films

作　　者：胡承威 夏晓红[1] 鲍玉文 高云[1] 

机构地区：[1]湖北大学材料科学与工程学院,湖北武汉

出　　处：《材料科学》2015年第2期46-53,共8页Material Sciences

基　　金：国家教育部基金(批准号:211108,20134208110005);湖北省科技厅(批准号:2011BAB032)基金的支持。

摘　　要：通过金属铝诱导非晶硅晶化技术,在玻璃衬底上获得了[111]取向生长的多晶硅薄膜。研究了Al诱导Si取向结晶生长所需的退火温度和时间。通过对Al/Si界面层SiO2层厚度的改变,研究了界面SiO2层对取向结晶生长的影响。通过在Al层表面反应沉积Al2O3,研究了表面氧化对薄膜微结构的影响,获得了低表面空洞密度致密Si[111]取向生长薄膜。采用PECVD在铝诱导晶化硅薄膜表面沉积非晶硅层,经快速退火后获得外延[111]取向多晶硅薄膜,可用于多晶硅薄膜电池。In the present work, [111] oriented polycrystalline Si thin films on SiO2 glass substrates have been obtained by the aluminum induced crystallization (AIC) method. The annealing temperatures and time for the Si induced crystallization were optimized experimentally. The effects of the SiO2 layer at the Al/Si interface on the oriented crystallization of the Si layer were investigated, with the re-sults being compared for the different SiO2 thicknesses. By reactive oxidation of the aluminum surface depositing alumina Al2O3, the effect of the surface oxidation on the microstructure of the Si films were further studied. It was found that the resultant dense Si film has a lower void density on the surface. With an amorphous Si layer being deposited on the Al induced crystallized Si film, a polycrystalline Si film with [111] oriented growth was obtained by a rapid thermal annealing, which is applicable for the polycrystalline Si solar cells.

关 键 词：铝诱导晶化 非晶硅 界面 

分 类 号：O48[理学—固体物理]