区熔法拉制硅单晶中多晶棒化刺工艺探讨  

The Spine Removal of Poly Crystal Rod in Single Crystal Growth by Floating Zone

作　　者：陈海滨 闫志瑞 库黎明 朱秦发 王永涛 苏冰 

机构地区：[1]有研半导体材料有限公司,北京

出　　处：《材料科学》2020年第4期234-237,共4页Material Sciences

摘　　要：区熔硅单晶因其高电阻、高少子寿命的优点,成为电力电子器件制造中不可或缺的半导体材料。本文首先对区熔硅单晶生长的机理进行探究,然后得出了解决多晶棒出刺问题的工艺。The floating zone silicon single crystal becomes an indispensable material because of its advantage in high resistivity and high minority carrier life. This paper discuss the principle of the growth of the single silicon crystal by floating zone, then a process is gained which remove the spine of poly crystal rod.

关 键 词：区熔法 硅单晶 多晶棒 化刺工艺 

分 类 号：TN3[电子电信—物理电子学]