基于低温熔融技术的硅–玻璃异质材料键合工艺设计  

Based on Fusion Bonding Technology for the Design of Bonding Process for Silica-Glass Heterogeneous Materials

作　　者：潘代强 吴正鹏 张云 

机构地区：[1]国家智能传感器创新中心(上海芯物科技有限公司),上海 [2]格科半导体(上海)有限公司,上海

出　　处：《材料科学》2023年第6期503-510,共8页Material Sciences

摘　　要：传统硅–玻璃为衬底晶圆的异质材料键合有阳极键合工艺,但是阳极键合需要高碱金属氧化物含量的玻璃晶圆,且工艺需要施加电场和高温加热,高温高压会引起较大键合残余应力,导致器件结构变化或性能衰减,对半导体器件应用有较大局限性。本文详细设计了一种针对硅–玻璃为衬底的异质材料的低温键合工艺,通过在玻璃衬底沉积氧化膜,预键合时界面间形成氢键连接,经过后续退火氢键转化为共价键,最终成品键合界面均匀、透明,键合界面空洞缺陷率小于5%,键合力大于1.8 J/m2,实现硅–玻璃晶圆的永久键合,大大增加了硅–玻璃键合工艺的应用范围。The tradi-tional silicon-glass substrate wafer bonding process has anode bonding, but anode bonding requires glass wafers with high alkali metal oxide content, and the process requires the application of elec-tric field and high temperature heating. High temperature and high pressure will cause large bonding residual stress, resulting in device structure changes or performance attenuation, which has great limitations for semiconductor device applications. In this paper, a low-temperature bonding process for silica-glass heterogeneous materials as substrate was designed in detail. By depositing oxide film on glass substrate, hydrogen bond was formed between the interfaces during pre-bonding, which was converted into covalent bond after subsequent annealing. Finally, the bonding interface of the final product was uniform and transparent, the hole defect rate of the bonding interface was less than 5%, and the bonding force was greater than 1.8 J/m2. The realiza-tion of permanent bonding of silicon-glass wafer greatly increases the application range of sili-con-glass bonding technology.

关 键 词：硅–玻璃衬底 异质材料键合 低温键合 

分 类 号：TQ1[化学工程]