EUV掩模白板缺陷的反射近场模拟研究  

Simulation Research on Reflective Near Field of EUV Mask Blank Defects

作　　者：白智成 

机构地区：[1]长春理工大学物理学院,吉林 长春

出　　处：《材料科学》2024年第6期983-991,共9页Material Sciences

摘　　要：极紫外光刻掩模白板是制造光刻图形的基础,随着极紫外光刻技术的不断发展,工艺要求逐渐向“零缺陷”掩模标准推进。在7 nm及以下节点,缺陷对于极紫外掩模白板良率的影响不可忽视。本文采用时域有限差分(Finite-Difference Time-Domain, FDTD)方法仿真研究了反射近场强度分布的特征,并仿真得到了不同尺寸的缺陷在多层膜的内部纵向深度对相位的影响。With the development of extreme ultra-violet lithography technology, the process requirement is gradually advancing to the standard of “Zero Defect” mask. The effect of the defect on the yield of EUV mask blank can not be neglected at the nodes below 7 nm. In this paper, the Finite-Difference Time-Domain (FDTD) method is used to simulate the near-field intensity distribution of the reflected, and the phase influence of defect size and position in the multilayers is obtained.

关 键 词：极紫外光刻 掩模白板 时域有限差分 相位缺陷 

分 类 号：TN3[电子电信—物理电子学]