CMOS集成电路总剂量效应加固技术研究现状  

Research Status of Total Dose Effect of CMOS Integrated Circuit

作　　者：梁泽宇 庞洪超[1] 李兴隆[1] 骆志平[1] 

机构地区：[1]中国原子能科学研究院核安全与环境工程技术研究所,北京

出　　处：《核科学与技术》2024年第2期118-128,共11页Nuclear Science and Technology

摘　　要：在核设施运行、乏燃料后处理、可控核聚变、航天卫星与太空探索、核军工、γ辐照站等存在强辐射的场景下,高能粒子、射线会与器件中的半导体材料相互作用产生辐射效应,对信号的完整性和精度产生较大影响。本文首先介绍了总剂量效应(TID)的作用机制,及其在MOS器件中的主要影响:总剂量效应会导致MOS管阈值电压漂移、跨导下降、载流子迁移率降低和电流额外泄漏等问题。其次,按照时间顺序依次阐述了近代以来总剂量效应在半导体器件特别是是CMOS器件中的具体影响,尤其对浅槽隔离氧化物(Shallow Trench Isolation, STI)受到总剂量效应的影响做了着重描述。最后,分析了在电路级中的总剂量效应,以及目前流行的几种抗辐射加固技术。In the scenario of strong radiation in the operation of nuclear facilities, spent fuel reprocessing, controllable nuclear fusion, space satellites and space exploration, nuclear military industry, and γ radiation station, high-energy particles and rays will interact with the semiconductor materials in the device to produce radiation effect, which will have a great impact on the integrity and accuracy of the signal. This paper first introduces the mechanism of total dose effect (TID) and its main effects in MOS devices: total dose effect leads to MOS tube threshold voltage drift, transguide drop, reduced carrier mobility, and additional current leakage. Secondly, the specific effects of the total dose effect in semiconductor devices, especially CMOS devices in modern times are expounded in chronological order, especially for the influence of shallow trough isolated oxides (Shallow Trench Isolation, STI) by the total dose effect. Finally, the total dose effect at the circuit level and several popular radiation reinforcement techniques are analyzed.

关 键 词：CMOS集成电路 总剂量效应 抗辐射加固技术 

分 类 号：TN3[电子电信—物理电子学]