SOI基RCE光电探测器谐振腔结构的设计与优化  

Design and Optimization of Resonant Cavity Structure of SOI-Based RCE Photodetectors

作　　者：程彩莉 刘倩文 

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州

出　　处：《光电子》2016年第4期131-138,共8页Optoelectronics

摘　　要：由于CMOS光电探测器存在量子效率低、工作带宽窄等性能问题,为实现更高量子效率的CMOS光电探测器,结合工艺实现性,本文构建了一种新型的SOI CMOS工艺可兼容的光电探测器谐振腔结构。基于底镜采用一层1/4波长(850 nm光波长)奇数倍厚度SiO2,顶镜采用1/4波长偶数倍厚度SiO2的DBR反射镜,形成的SOI基谐振腔结构适用于光通信850 nm光波长的RCE PD器件。数值仿真结果表明,RCE PD器件比CMOS PD器件提高了量子效率,验证了谐振腔结构的正确性。Due to the functional problems of CMOS photodetectors such as low quantum efficiency, narrow bandwidth and so on, this paper proposed a new resonant cavity structure compatible with SOI CMOS process to fabricate the CMOS photodetector with a higher quantum efficiency based on process optimization. By adopting the SiO2 with the thickness of odd number of a layer of 1/4 wavelength (850 nm optical wavelength) as the bottom DBR mirror, and using the SiO2 mirror with the thickness of an even multiple of 1/4 wavelength as the top DBR mirror, the SOI resonant cavity structure was prepared and demonstrated being suitable for the PD RCE device with the optical communication wavelength of 850 nm. Numerical simulation results showed that the PD RCE device could improve the quantum efficiency effectively compared with the PD CMOS device, which verifies the correctness of the resonant cavity structure.

关 键 词：RCE光电探测器 SOI 谐振腔 量子效率 

分 类 号：TN3[电子电信—物理电子学]