中红外半导体激光器腔面膜的研究现状  

Research Status of Cavity Masks for Mid-Infrared Semiconductor Lasers

作　　者：刘乐 秦宪超 曲轶 孙国玉 

机构地区：[1]海南师范大学,海南 海口

出　　处：《光电子》2022年第2期71-77,共7页Optoelectronics

摘　　要：3~5 µm波段是重要的大气窗口,该波段内的4.6 µm半导体激光器广泛应用于痕量气体检测、自由空间光通信和定向红外对抗等领域。随着4.6 µm半导体激光器应用领域的不断拓展,对器件的性能要求越来越高。腔面镀膜是半导体激光器的一个重要但是相对薄弱的器件工艺。随着半导体激光器输出光功率的提升,以及波长向中远红外推进,具有抗激光损伤和高稳定性的光学薄膜成为制约半导体激光器进一步发展的主要因素之一。薄膜的激光损伤阈值、环境稳定性、宽带隙、应力影响、吸收损耗、散射损耗、机械强度等因素都会影响薄膜在激光器中的性能。本文主要总结了4.6 μm波段附近半导体激光器腔面薄膜的报道。3~5 μm band is an important atmospheric window. 4.6 μm semiconductor lasers in this band are widely used in the fields of trace gas detection, free space optical communication and directional infrared countermeasure. With the continuous expansion of the application field of 4.6 μm semi-conductor laser, the demand for the performance of the device is higher and higher. Cavity surface coating is an important but relatively weak device process of semiconductor laser. With the further increase of the output optical power of the semiconductor laser and the promotion of the wavelength to the middle and far infrared, the optical thin film with anti-laser damage and high stability has become one of the factors limiting the further development of the semiconductor laser. The laser damage threshold, environmental stability, wide band gap, stress effect, absorption loss, scattering loss, mechanical strength and other factors will affect the performance of the thin film in the laser. This paper mainly summarizes the reports of thin films on the cavity surface of semiconductor lasers near 4.6 μm wave band.

关 键 词：高反膜 增透膜 薄膜制备技术 半导体激光器 

分 类 号：TN2[电子电信—物理电子学]