源极跟随器离子注入工艺对RTS噪声影响分析  

Analysis of the Influence of Source Follower Ion Implantation on RTS Noise

作　　者：王玮 

机构地区：[1]上海集成电路研发中心有限公司,上海

出　　处：《光电子》2024年第2期19-24,共6页Optoelectronics

摘　　要：随机电报信号(Random Telegraph Signal, RTS)噪声是影响CMOS图像传感器图像质量的主要因素之一。伴随着集成电路制造工艺技术的高速发展,源极跟随器(Source Follower, SF)晶体管栅极尺寸不断缩小,使得对RTS噪声影响也愈发增大。文章研究了不同源极跟随器离子注入工艺对RTS噪声的影响,通过工艺优化后,可获得最佳的RTS噪声改善效果。Random Telegraph Signal (RTS) noise is one of the most main factors impacting the image quality of CMOS image sensor. With the rapid development of integrated circuit manufacturing technology, the gate size of the Source Follower (SF) transistors keeps decreasing, and the effect on RTS noise is also increasing. In this paper, the effects of different source follower ion implantation processes on RTS noise were studied, and the best RTS noise improvement results were obtained through process optimization.

关 键 词：随机电报信号噪声 源极跟随器 离子注入工艺 工艺优化 

分 类 号：TN3[电子电信—物理电子学]