Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell  

作　　者：Nfally Dieme 

机构地区：[1]Laboratory of Semiconductors and Solar Energy, Department of Physics, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal

出　　处：《Energy and Power Engineering》2015年第5期203-208,共6页能源与动力工程（英文）

摘　　要：The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).

关 键 词：VERTICAL JUNCTION ENERGY Gap PHOTOCURRENT Density PHOTOVOLTAGE 

分 类 号：R73[医药卫生—肿瘤]