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作 者:Sylvester Lekoo Mammah Fidelix Ekeoma Opara Friday Barikpe Sigalo Sabastine Chukwuemeka Ezugwu Fabian Ifeanyichukwu Ezema
机构地区:[1]Department of Physics and Astronomy, University of Nigeria, Nsukka, Nigeria [2]Department of Physics, Faculty of Science, Rivers State University of Science and Technology,Port Harcourt, Nigeria [3]Department of Science Laboratory Technology, School of Applied Sciences,Rivers State Polytechnic, Bori, Nigeria
出 处:《Journal of Modern Physics》2012年第10期1516-1522,共7页现代物理(英文)
摘 要:Thin films of Zinc Oxide (ZnO) having different concentrations were deposited using the Aqueous Chemical Growth (ACG) method. The films were characterized using Rutherford Back Scattering (RBS) spectroscopy for chemical composition and thickness, X-Ray Diffraction (XRD) for crystallographic structure, a UV-VIS spectrophotometer for the analysis of the optical and solid state properties which include spectral absorbance, transmittance, reflectance, refractive index, direct band gap, real and imaginary dielectric constants, absorption and extinction coefficients and a photomicroscope for photomicrographs. The average deposited film thickness was 100nm. The results indicate that the values of all the optical and solid state properties investigated vary directly with concentration except transmittance which is the reverse. Thus, the optical and solid state properties of ZnO thin film deposited by the Aqueous Chemical Growth method can be tuned by deliberately controlling the concentration of the precursors for various optoelectronic applications including its application as absorber layer in solar cells.Thin films of Zinc Oxide (ZnO) having different concentrations were deposited using the Aqueous Chemical Growth (ACG) method. The films were characterized using Rutherford Back Scattering (RBS) spectroscopy for chemical composition and thickness, X-Ray Diffraction (XRD) for crystallographic structure, a UV-VIS spectrophotometer for the analysis of the optical and solid state properties which include spectral absorbance, transmittance, reflectance, refractive index, direct band gap, real and imaginary dielectric constants, absorption and extinction coefficients and a photomicroscope for photomicrographs. The average deposited film thickness was 100nm. The results indicate that the values of all the optical and solid state properties investigated vary directly with concentration except transmittance which is the reverse. Thus, the optical and solid state properties of ZnO thin film deposited by the Aqueous Chemical Growth method can be tuned by deliberately controlling the concentration of the precursors for various optoelectronic applications including its application as absorber layer in solar cells.
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