Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor  

作　　者：Yuki Kamochi Atsuhiro Motomiya Hitoshi Habuka Yuuki Ishida Shin-Ichi Ikeda Shiro Hara Yuki Kamochi;Atsuhiro Motomiya;Hitoshi Habuka;Yuuki Ishida;Shin-Ichi Ikeda;Shiro Hara(Department of Chemistry Applications, Yokohama National University, Yokohana, Japan;National Institutes of Advanced Science and Technology, Tsukuba, Japan;Minimal Fab Promotion Organization, Tsukuba, Japan)

机构地区：[1]Department of Chemistry Applications, Yokohama National University, Yokohana, Japan [2]National Institutes of Advanced Science and Technology, Tsukuba, Japan [3]Minimal Fab Promotion Organization, Tsukuba, Japan

出　　处：《Advances in Chemical Engineering and Science》2023年第1期7-18,共12页化学工程与科学期刊（英文）

摘　　要：A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

关 键 词：Chemical Vapor Deposition Boron-Silicon Film Boron Trichloride DICHLOROSILANE 

分 类 号：TG1[金属学及工艺—金属学]