Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface  

作　　者：Junji Yamanaka Mai Shirakura Chiaya Yamamoto Naoto Utsuyama Kei Sato Takane Yamada Kosuke O. Hara Keisuke Arimoto Kiyokazu Nakagawa 

机构地区：[1]Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan [2]Center for Creative Technology, University of Yamanashi, Kofu, Japan [3]Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan

出　　处：《Journal of Materials Science and Chemical Engineering》2018年第1期25-31,共7页材料科学与化学工程（英文）

摘　　要：Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.

关 键 词：STRAINED Si SiGe(110) Stress-Induced Twin Transmission Electron Microscopy 

分 类 号：R73[医药卫生—肿瘤]