国家教育部博士点基金(20090076120010)

作品数：2被引量：0H指数：0
导出分析报告
相关期刊：《Chinese Physics B》更多>>
相关主题：HGCDTEDOPEDEXTRINSICMOLECULAR_BEAM_EPITAXYINTRINSIC更多>>
相关领域：理学电子电信更多>>
-
在结果中检索

检索结果分析

结果分析中...
共 条 记 录，以下是1-2
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
The determination of the x value in doped Hg_(1-x)Cd_x Te by transmission spectra
《Chinese Physics B》2012年第1期488-492,共5页Yue Fang-Yu Chen Lu Li Ya-Wei Sun Lin Yang Ping-Xiong Chu Jun-Hao 
Project supported by the National Basic Research Program of China(Grant No.2007CB924901);the Shanghai Leading Academic Discipline Project,China(Grant No.B411);the National Natural Science Foundation of China(Grant Nos.60906043,60990312,and 61076060);the Shanghai Municipal Commission of Science and Technology Project,China(Grant Nos.09ZR1409200,10ZR1409800,and 10JC1404600);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090076120010);the Fundamental Research Funds for the Central Universities,China(Grant No.09ECNU)
Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is s...
关键词：intrinsic/extrinsic-doped HgCdTe bandedge parameters transmission spectra 
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
《Chinese Physics B》2010年第11期555-561,共7页越方禹 陈璐 李亚巍 胡志高 孙琳 杨平雄 褚君浩 
Project supported by the National Basic Research Program of China (Grant No. 2007CB924901);Shanghai Leading Academic Discipline Project (Grant No. B411);National Natural Science Foundation of China (Grant No. 60906043);Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800);Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010);the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU)
Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic （As）- doped Hg1-xCdxTe （x ≈ 0.3） grown by molecular beam epitaxy has been systematically investigated by mo...
关键词：As-doped HgCdTe annealing influence extrinsic/intrinsic impurities modulated photoluminescence spectra 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部