Project supported by the National Natural Science Foundation of China (Grant No. 50972007);the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407);the Beijing Municipal Natural Science Foundation,China (Grant No. 4092035);the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703);the Special Items Fund of Beijing Municipal Commission of Education,China;the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 C substrate temperature,respectively.By comparing the da...
supported by the National Natural Science Foundation of China (Grant No. 50972007);the Beijing Municipal Natural Science Foundation (Grant No. 4092035);the National Basic Research Program of China (973 Program) of the Ministry of Science and Technology of China(Grant No. 2011CB932703);the National Science Fund for Distinguished Young Scholars (Grant No. 60825407);the Special Items Fund of the Beijing Municipal Commission of Education;the Opened Fund of the State Key Laboratory of Integrated Optoelectronics
A high performance heterojunction organic ultraviolet photodetector based on NPB and Bphen has been fabricated. A trans- parent conducting polymer PEDOT:PSS coated quartz substrate instead of ITO coated glass substra...
Project supported by the National Natural Science Foundation of China (Grant No. 50972007);the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407);the Beijing Municipal Natural Science Foundation,China (Grant No. 4092035);the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703);the Special Items Fund of Beijing Municipal Commission of Education,China;the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing th...
supported by the National Natural Science Foundation of China (No.50972007);the Beijing Municipal Natural Science Foundation (No.4092035);the Special Items Fund of Beijing Municipal Commission of Education;the National Science Fund for Distinguished Young Scholars (No.60825407)
Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The rat...
supported by the National Natural Science Foundation of China (No. 50972007);the Beijing Municipal Natural Science Foundation (No. 4092035);the Foundation of Beijing Jiaotong University (No.2006XZ008);the Special Items Fund of Beijing Municipal Commission of Education;the National ScienceFund for Distinguished Young Scholars (No. 60825407)
We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2- tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole (PBD) using spin coating. The device exhibites a low dark current...
supported by the National Natural Science Foundation of China (Grant No.50972007);the Beijing Municipal Natural Science Foundation (Grant No.4092035);the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No.2011CB932703);the Special Items Fund of Beijing Municipal Commission of Education;the Opened Fund of State Key Laboratory on Integrated Optoelectronics;the National Science Fund for Distinguished Young Scholars (Grant No.60825407)
We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties o...