METAL-OXIDE

作品数：63被引量：105H指数：5
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相关领域：电子电信自动化与计算机技术更多>>
相关作者：刘继华王志功袁成李智群更多>>
相关机构：东南大学更多>>
相关期刊：《eScience》《Science China Materials》《Chinese Journal of Chemical Engineering》《Journal of Electronics(China)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金高等学校学科创新引智计划更多>>
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Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis
《Chinese Physics Letters》2014年第3期137-139,共3页ZHANG Peng ZHAO Sheng-Lei XUE Jun-Shuai ZHANG Kai MA Xiao-Hua ZHANG Jin-Cheng HAO Yue 
Supported by the National Natural Science Foundation of China under Grant Nos 61334002 and K5051325020.
We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies an...
Band Structures of Metal-Oxide Capped Graphene： A First Principles Study被引量：1
《Chinese Physics Letters》2010年第7期225-228,共4页刘晗 孙清清 陈琳 徐岩 丁士进 张卫 张世理 
Supported by the National Natural Science Foundation of China （60776017）, the State Key Projects （2009ZX02039-003, 2009ZX02022-002, 2009ZX02035-005）, and the Fund of State Key Laboratory of ASIC and System （09MS004）. We acknowledge Professor Xingao Gong for help in the calculation.
We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semicondu...
Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor被引量：3
《Chinese Physics Letters》2008年第5期1848-1849,共2页徐成 刘波 陈一峰 梁爽 宋志棠 封松林 万旭东 杨左娅 谢志峰 陈邦明 
A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor （MOSFET） is fabricated using standard 0.18 #m complementary metM-oxide semiconductor process techno...
关键词：GE2SB2TE5 FILM 
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