National Natural Science Foundation of China(Grant No.62334003);Guangdong Basic and Applied Basic Research Foundation(Grant No.2020A1515110567).
In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS)cascode anode GaN lateral field-effect diode(CA-LFED)to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN ...
supported by National Natural Science Foundation of China(Grant Nos.62034002,61874022)。
Owing to wideband spectrum resources,sub-terahertz technologies have significant value in high-data-rate wireless communication applications and other fields[1].The evolving transceiver places a high demand on low-noi...